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HGTG20N60C3D

IGBT 45A Through Hole 164W 55ns TO-247AD 600V

Product Category: IGBTs - Single
Mfr. Part #
HGTG20N60C3D
Manufacturer: onsemi
Package: TO-3P-3, SC-65-3
Lead Free Status /RoHS Status:
Data Sheet: HGTG20N60C3D Datasheet
Inventory: In Stock

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Mfr. Part #: HGTG20N60C3D

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category IGBTs - Single

Series -

Packaging Tube

Package-Case TO-3P-3, SC-65-3

Input-Type Standard

Mounting-Type Through Hole

Supplier-Device-Package TO-247AD

Power-Max 164W

Reverse-Recovery-Time-trr 55ns

Electric current collectors 45A

Voltage-Collector-Emitter-Breakdown-Max 600V

IGBT-Type -

Current-Collector-Pulsed-Icm 300A

Vce-on-Max-Vge-Ic 1.8V @ 15V, 20A

Switching-Energy 500Î¼J (on), 500Î¼J (off)

Total Gate Charge 91nC

Td-on-off-25Â°C 28ns/151ns

Test-Condition 480V, 20A, 10 Ohm, 15V

Product Details

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25Â°C and 150Â°C. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063).

Features

â€¢ 45A, 600V, TC= 25Â°C
â€¢ 600V Switching SOA Capability
â€¢ Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ= 150Â°C
â€¢ Short Circuit Rating
â€¢ Low Conduction Loss
â€¢ Hyperfast Anti-Parallel Diode

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Mfr. Part #: HGTG20N60C3D