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HGTP7N60C3D
IGBT 14A Through Hole 60W TO-220AB 600V
- Product Category: IGBTs - Single
- Mfr. Part # HGTP7N60C3D
- Manufacturer: onsemi
- Package: TO-220-3
- Lead Free Status /RoHS Status:
- Data Sheet: HGTP7N60C3D Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: HGTP7N60C3D
- Specifications
- Product Details
Specifications
Product Details
General Description
The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Features
• 14A, 600V at TC = 25°C• 600V Switching SOA Capability
• Typical Fall Time...................140ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
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ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the HGTP7N60C3D. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: HGTP7N60C3D
