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HMC-ALH382
IC RF AMP LN DIE
- Product Category: RF Amplifiers
- Mfr. Part # HMC-ALH382
- Manufacturer: HITTITE
- Package: SMD
- Lead Free Status /RoHS Status:
- Data Sheet: HMC-ALH382 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: HMC-ALH382
- Specifications
- Product Details
Specifications
Product Details
General Description
The HMC-ALH382 is a high dynamic range, four stage GaAs HEMT MMIC Low Noise Amplifi er (LNA) which operates between 57 and 65 GHz. The HMC-ALH382 features 21 dB of small signal gain, 4 dB of noise fi gure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/ Au metallized and the amplifi er device is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.Features
Noise Figure: 3.8 dBP1dB: +12 dBm
Gain: 21 dB
Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.55 x 0.73 x 0.1 mm
Typical Applications
This HMC-ALH382 is ideal for:• Short Haul / High Capacity Links
• Wireless LANs
• Military & Space
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the HMC-ALH382. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: HMC-ALH382