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HN1B01FU-Y(L,F,T)

BJT Array 150mA 120MHz Surface Mount 200mW US6 NPN, PNP 50V

Product Category: Transistors (BJT) - Arrays
Mfr. Part #
HN1B01FU-Y(L,F,T)
Manufacturer: Toshiba Semiconductor and Storage
Package: 6-TSSOP, SC-88, SOT-363
Lead Free Status /RoHS Status:
Data Sheet: HN1B01FU-Y(L,F,T) Datasheet
Inventory: In Stock

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Mfr. Part #: HN1B01FU-Y(L,F,T)

Specifications
Product Details

Specifications

Manufacturer Toshiba Semiconductor and Storage

Product Category Transistors (BJT) - Arrays

Series -

Packaging Alternate Packaging

Package-Case 6-TSSOP, SC-88, SOT-363

Mounting-Type Surface Mount

Supplier-Device-Package US6

Power-Max 200mW

Transistor-Type NPN, PNP

Electric current collectors 150mA

Voltage-Collector-Emitter-Breakdown-Max 50V

DC-Current-Gain-hFE-Min-Ic-Vce 120 @ 2mA, 6V

Vce saturation 300mV @ 10mA, 100mA

Current-Collector-Cutoff-Max 100nA (ICBO)

Frequency-Transition 120MHz

Product Details

Audio Frequency General Purpose Amplifier Applications

Q1:

High voltage and high current
: VCEO= âˆ’50V, IC = âˆ’150mA (max)
High hFE : hFE = 120~400
Excellent hFElinearity
: hFE(IC= âˆ’0.1mA) / hFE(IC= âˆ’2mA) = 0.95 (typ.)

Q2:
High voltage and high current
: VCEO= 50V, IC = 150mA (max)
High hFE : hFE = 120~400
Excellent hFElinearity
: hFE(IC= 0.1mA) / hFE(IC= 2mA) = 0.95 (typ.)

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Please send inquiry, we will respond immediately.

Mfr. Part #: HN1B01FU-Y(L,F,T)