wholesale HN1B04FU-GR,LF BJTs - Bipolar Transistors supplier,manufacturer,distributor

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HN1B04FUGRLF

Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp

  • BJTs - Bipolar Transistors
  • HN1B04FU-GR,LF
  • Toshiba
  • Cut Tape/Reel
  • In Stock
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Mfr. Part #: HN1B04FU-GR,LF

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Mounting Style SMD/SMT
Package / Case SOT-363-6
Transistor Polarity NPN, PNP
Configuration Dual
Collector- Emitter Voltage VCEO Max 50 V
Collector- Base Voltage VCBO 60 V, 50 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 100 mV
Maximum DC Collector Current 150 mA
Pd - Power Dissipation 200 mW
Gain Bandwidth Product fT 150 MHz, 120 MHz
Minimum Operating Temperature -
Maximum Operating Temperature + 125 C
Qualification AEC-Q101
Series HN1B04
Packaging Cut Tape
Packaging Reel
DC Current Gain hFE Max 400
Technology Si
Brand Toshiba
DC Collector/Base Gain hfe Min 120
Product Type BJTs - Bipolar Transistors
Standard Pack Qty 3000
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the HN1B04FUGRLF. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: HN1B04FU-GR,LF

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