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HN1B04FU-GRLXHF

Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-363 (US6)

Product Category: BJTs - Bipolar Transistors
Mfr. Part #
HN1B04FU-GR,LXHF
Manufacturer: Toshiba
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: HN1B04FU-GR,LXHF

Specifications

Specifications

Manufacturer Toshiba

Mounting Style SMD/SMT

Package / Case US-6

Transistor Polarity NPN, PNP

Configuration Dual

Collector- Emitter Voltage VCEO Max 50 V

Collector- Base Voltage VCBO 50 V

Emitter- Base Voltage VEBO 5 V, 60 V

Collector-Emitter Saturation Voltage 100 mV

Pd - Power Dissipation 200 mW

Gain Bandwidth Product fT 120 MHz, 150 MHz

Qualification AEC-Q200

Packaging Cut Tape

Packaging Reel

DC Current Gain hFE Max 400 at 2 mA, 6 V

Technology Si

Brand Toshiba

Continuous Collector Current 150 mA

DC Collector/Base Gain hfe Min 120 at 2 mA, 6 V

Product Type BJTs - Bipolar Transistors

Standard Pack Qty 3000

Subcategory Transistors

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Mfr. Part #: HN1B04FU-GR,LXHF