wholesale HN4A51JTE85LF BJTs - Bipolar Transistors supplier,manufacturer,distributor

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HN4A51JTE85LF

Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A

  • BJTs - Bipolar Transistors
  • HN4A51JTE85LF
  • Toshiba
  • Cut Tape/Reel
  • In Stock
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Mfr. Part #: HN4A51JTE85LF

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Mounting Style SMD/SMT
Package / Case SOT-25-5
Transistor Polarity PNP
Configuration Dual
Collector- Emitter Voltage VCEO Max 120 V
Collector- Base Voltage VCBO 120 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 100 mA
Pd - Power Dissipation 300 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature -
Maximum Operating Temperature + 150 C
Series HN4A51
Packaging Cut Tape
Packaging Reel
DC Current Gain hFE Max 700
Technology Si
Brand Toshiba
Continuous Collector Current - 100 mA
DC Collector/Base Gain hfe Min 200
Product Type BJTs - Bipolar Transistors
Standard Pack Qty 3000
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the HN4A51JTE85LF. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: HN4A51JTE85LF

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