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HSCH-5312

DIODE SCHOTTKY 500V BEAM LEAD

  • RF Die Products
  • HSCH-5312
  • Broadcom
  • HSCH-5312 Datasheet
  • In Stock
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Mfr. Part #: HSCH-5312

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  • Specifications
  • Product Details

Specifications

Manufacturer Broadcom
Product Category RF Die Products
Series -
Function Diode

Product Details

Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
The Agilent beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.
These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode.

Features

• Platinum Tri-Metal System
High Temperature Stability
• Silicon Nitride Passivation
Stable, Reliable Performance
• Low Noise Figure
Guaranteed 7.5 dB at 26 GHz
• High Uniformity
Tightly Controlled Process
Insures Uniform RF
Characteristics
• Rugged Construction
4 Grams Minimum Lead Pull
• Low Capacitance
0.10 pF Max. at 0 V
• Polyimide Scratch Protection

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the HSCH-5312. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: HSCH-5312

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