wholesale IGW20N60H3 IGBT Transistors supplier,manufacturer,distributor

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IGW20N60H3

IGBT Transistors 600V HI SPEED SW IGBT

  • IGBT Transistors
  • IGW20N60H3
  • Infineon
  • Tube
  • IGW20N60H3 Datasheet
  • In Stock
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Mfr. Part #: IGW20N60H3

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  • Specifications
  • Product Details

Specifications

Manufacturer Infineon
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.95 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 40 A
Pd - Power Dissipation 170 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Series HighSpeed 3
Packaging Tube
Brand Infineon Technologies
Gate-Emitter Leakage Current 100 nA
Product Type IGBT Transistors
Standard Pack Qty 240
Subcategory IGBTs
Tradename TRENCHSTOP

Product Details

High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120

Features:

TRENCHSTOPTM technology offering
• best in class switching performance: less than 500µJ total switching losses achievable
• very low VCEsat
• low EMI
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Applications:

• solar inverters
• uninterruptible power supplies
• welding converters
• converters with high switching frequency

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IGW20N60H3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IGW20N60H3

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