wholesale IGW25N120H3FKSA1 IGBT Transistors supplier,manufacturer,distributor

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IGW25N120H3FKSA1

IGBT Transistors IGBT PRODUCTS

  • IGBT Transistors
  • IGW25N120H3FKSA1
  • Infineon
  • Tube
  • IGW25N120H3FKSA1 Datasheet
  • In Stock
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Mfr. Part #: IGW25N120H3FKSA1

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  • Specifications

Specifications

Manufacturer Infineon
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 2.05 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 50 A
Pd - Power Dissipation 326 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Series Rectifier Diode Module
Packaging Tube
Brand Infineon Technologies
Gate-Emitter Leakage Current 600 nA
Product Type IGBT Transistors
Standard Pack Qty 240
Subcategory IGBTs
Tradename TRENCHSTOP

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IGW25N120H3FKSA1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IGW25N120H3FKSA1

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