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IPB020NE7N3GXT

MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3

  • MOSFET
  • IPB020NE7N3 G
  • Infineon
  • Cut Tape/Reel
  • IPB020NE7N3 G Datasheet
  • In Stock
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Mfr. Part #: IPB020NE7N3 G

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  • Specifications

Specifications

Manufacturer Infineon
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case TO-263-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 75 V
Id - Continuous Drain Current 120 A
Rds On - Drain-Source Resistance 2 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 155 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 300 W
Channel Mode Enhancement
Tradename OptiMOS
Series OptiMOS 3
Packaging Cut Tape
Packaging Reel
Configuration Single
Height 4.4 mm
Length 10 mm
Transistor Type 1 N-Channel
Type OptiMOS 3 Power-Transistor
Width 9.25 mm
Brand Infineon Technologies
Forward Transconductance - Min 98 S
Fall Time 22 ns
Product Type MOSFET
Rise Time 26 ns
Standard Pack Qty 1000
Subcategory MOSFETs
Typical Turn-Off Delay Time 70 ns
Typical Turn-On Delay Time 19 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IPB020NE7N3GXT. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IPB020NE7N3 G

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