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IPD90N03S4L02ATM

MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2

Product Category: MOSFET
Mfr. Part #
IPD90N03S4L02ATMA1
Manufacturer: Infineon
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: IPD90N03S4L02ATMA1 Datasheet
Inventory: In Stock

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Mfr. Part #: IPD90N03S4L02ATMA1

Specifications

Specifications

Manufacturer Infineon

Technology Si

Mounting Style SMD/SMT

Package / Case TO-252-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 30 V

Id - Continuous Drain Current 90 A

Rds On - Drain-Source Resistance 1.8 mOhms

Vgs - Gate-Source Voltage - 16 V, + 16 V

Vgs th - Gate-Source Threshold Voltage 1 V

Qg - Gate Charge 140 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Pd - Power Dissipation 136 W

Channel Mode Enhancement

Qualification AEC-Q101

Series XPD90N03

Packaging Cut Tape

Packaging Reel

Configuration Single

Height 2.3 mm

Length 6.5 mm

Transistor Type 1 N-Channel

Width 6.22 mm

Brand Infineon Technologies

Fall Time 13 ns

Product Type MOSFET

Rise Time 9 ns

Standard Pack Qty 2500

Subcategory MOSFETs

Typical Turn-Off Delay Time 62 ns

Typical Turn-On Delay Time 14 ns

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Mfr. Part #: IPD90N03S4L02ATMA1