wholesale IRF520PBF-BE3 MOSFET supplier,manufacturer,distributor

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IRF520PBF-BE3

MOSFET 100V N-CH

  • MOSFET
  • IRF520PBF-BE3
  • Vishay
  • Tube
  • IRF520PBF-BE3 Datasheet
  • In Stock
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Mfr. Part #: IRF520PBF-BE3

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  • Specifications

Specifications

Manufacturer Vishay
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-220AB-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 9.2 A
Rds On - Drain-Source Resistance 270 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 16 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 60 W
Channel Mode Enhancement
Packaging Tube
Configuration Single
Transistor Type 1 N-Channel
Brand Vishay / Siliconix
Fall Time 20 ns
Product Type MOSFET
Rise Time 30 ns
Standard Pack Qty 1000
Subcategory MOSFETs
Typical Turn-Off Delay Time 19 ns
Typical Turn-On Delay Time 8.8 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IRF520PBF-BE3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IRF520PBF-BE3

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