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IRF5851TRPBF

MOSFET 2.7A, 2.2A N and P-Channel Surface Mount -55Â°C ~ 150Â°C (TJ) SOT-23-6 Thin, TSOT-23-6 960mW HEXFETÂ® 20V

Product Category: FETs - Arrays
Mfr. Part #
IRF5851TRPBF
Manufacturer: Infineon
Package: SOT-23-6 Thin, TSOT-23-6
Lead Free Status /RoHS Status:
Data Sheet: IRF5851TRPBF Datasheet
Inventory: In Stock

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Mfr. Part #: IRF5851TRPBF

Specifications
Product Details

Specifications

Manufacturer Infineon

Product Category FETs - Arrays

Series HEXFETÂ®

Packaging Package-Case

SOT-23-6 Thin, TSOT-23-6 Operating-Temperature

-55Â°C ~ 150Â°C (TJ) Mounting-Type

Surface Mount Supplier-Device-Package

6-TSOP FET-Type

N and P-Channel Power-Max

960mW VDSS â€“ Drain-Source Voltage

20V Input Capacitance

400pF @ 15V FET-Feature

Logic Level Gate Current-Continuous-Drain-Id-25Â°C

2.7A, 2.2A Rds-On-Max-Id-Vgs

90 mOhm @ 2.7A, 4.5V Vgs-th-Max-Id

1.25V @ 250Î¼A Gate-Charge-Qg-Vgs

Product Details

Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability.

â— Ultra Low On-Resistance

â— Dual N and P Channel MOSFET
â— Surface Mount
â— Available in Tape & Reel
â— Low Gate Charge
â— Lead-Free
â— Halogen-Free

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Please send inquiry, we will respond immediately.

Mfr. Part #: IRF5851TRPBF

IRF5851TRPBF

Description

â— Ultra Low On-Resistance

â— Ultra Low On-Resistance