IRF640
MOSFETs N-Ch 200 Volt 18 Amp
- Product Category: MOSFETs
- Mfr. Part # IRF640
- Manufacturer: STMicroelectronics
- Data Sheet: IRF640 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: IRF640
- Specifications
- Product Details
Specifications
Manufacturer: STMicroelectronics
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current:: 18 A
Rds On - Drain-Source Resistance: 180 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Channel Mode: Enhancement
Packaging: Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 25 ns
Forward Transconductance - Min: 11 S
Height: 9.15 mm
Product Details
The IRF640 is an N-channel power MOSFET designed for high-voltage and high-speed switching applications. With a drain-to-source voltage (Vds) rating of 200V and a continuous drain current (Id) of 18A, it is ideal for power supplies, motor control, and inverter circuits. The IRF640 offers low on-resistance and fast switching speeds, making it highly efficient for controlling moderate to high-power loads in various electronic systems.
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Please send inquiry, we will respond immediately.
Mfr. Part #: IRF640
