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IRF7752TRPBF

MOSFET 4.6A 2 N-Channel (Dual) Surface Mount -55Â°C ~ 150Â°C (TJ) 8-TSSOP (0.173", 4.40mm Width) 1W HEXFETÂ® 30V

Product Category: FETs - Arrays
Mfr. Part #
IRF7752TRPBF
Manufacturer: Infineon
Package: 8-TSSOP (0.173", 4.40mm Width)
Lead Free Status /RoHS Status:
Data Sheet: IRF7752TRPBF Datasheet
Inventory: In Stock

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Mfr. Part #: IRF7752TRPBF

Specifications
Product Details

Specifications

Manufacturer Infineon

Product Category FETs - Arrays

Series HEXFETÂ®

Packaging Unit-Weight

0.005573 oz Mounting-Style

SMD/SMT Package-Case

8-TSSOP (0.173", 4.40mm Width) Technology

Si Operating-Temperature

-55Â°C ~ 150Â°C (TJ) Mounting-Type

Surface Mount Number-of-Channels

2 Channel Supplier-Device-Package

8-TSSOP Configuration

Dual FET-Type

2 N-Channel (Dual) Power-Max

1W Transistor-Type

2 N-Channel VDSS â€“ Drain-Source Voltage

30V Input Capacitance

861pF @ 25V FET-Feature

Logic Level Gate Current-Continuous-Drain-Id-25Â°C

4.6A Rds-On-Max-Id-Vgs

30 mOhm @ 4.6A, 10V Vgs-th-Max-Id

2V @ 250Î¼A Gate-Charge-Qg-Vgs

9nC @ 4.5V Pd-Power-Dissipation

1 W Vgs-Gate-Source-Voltage

12 V ID (drain current)

4.6 A Vds-Drain-Source-Breakdown-Voltage

30 V Rds-On-Drain-Source-Resistance

36 mOhms Transistor-Polarity

N-Channel Qg-Gate-Charge

Product Details

Description

HEXFETÂ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management.

â— Ultra Low On-Resistance

â— Dual N-Channel MOSFET
â— Very Small SOIC Package
â— Low Profile (< 1.1mm)
â— Available in Tape & Reel

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Mfr. Part #: IRF7752TRPBF

IRF7752TRPBF

Description

â— Ultra Low On-Resistance

â— Ultra Low On-Resistance