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IRG4BC20SDPBF

IGBT 19A Through Hole 60W 37ns TO-220AB 600V

Product Category: IGBTs - Single
Mfr. Part #
IRG4BC20SDPBF
Manufacturer: Infineon
Package: TO-220-3
Lead Free Status /RoHS Status:
Data Sheet: IRG4BC20SDPBF Datasheet
Inventory: In Stock

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Mfr. Part #: IRG4BC20SDPBF

Specifications
Product Details

Specifications

Manufacturer Infineon

Product Category IGBTs - Single

Series -

Packaging Tube

Unit-Weight 0.211644 oz

Mounting-Style Through Hole

Package-Case TO-220-3

Input-Type Standard

Mounting-Type Through Hole

Supplier-Device-Package TO-220AB

Configuration Single

Power-Max 60W

Reverse-Recovery-Time-trr 37ns

Electric current collectors 19A

Voltage-Collector-Emitter-Breakdown-Max 600V

IGBT-Type -

Current-Collector-Pulsed-Icm 38A

Vce-on-Max-Vge-Ic 1.6V @ 15V, 10A

Switching-Energy 320Î¼J (on), 2.58mJ (off)

Total Gate Charge 27nC

Td-on-off-25Â°C 62ns/690ns

Test-Condition 480V, 10A, 50 Ohm, 15V

Pd-Power-Dissipation 60 W

Operating temperature range - 55 C

Collector-Emitter-Voltage-VCEO-Max 600 V

Collector-Emitter-Saturation-Voltage 1.6 V

Continuous-Collector-Current-at-25-C 19 A

Maximum-Gate-Emitter-Voltage +/- 20 V

Product Details

Features

â€¢ Extremely low voltage drop 1.4Vtyp. @ 10A
â€¢ S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
â€¢ Very Tight Vce(on) distribution
â€¢ IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
â€¢ Industry standard TO-220AB package
â€¢ Lead-Free

Benefits

â€¢ Generation 4 IGBTs offer highest efficiencies available
â€¢ IGBTs optimized for specific application conditions
â€¢ HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
â€¢ Lower losses than MOSFETs conduction and Diode losses

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Mfr. Part #: IRG4BC20SDPBF