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IRG4BC30FDPBF

IGBT 31A Through Hole 100W 42ns TO-220AB 600V

Product Category: IGBTs - Single
Mfr. Part #
IRG4BC30FDPBF
Manufacturer: Infineon
Package: TO-220-3
Lead Free Status /RoHS Status:
Data Sheet: IRG4BC30FDPBF Datasheet
Inventory: In Stock

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Mfr. Part #: IRG4BC30FDPBF

Specifications
Product Details

Specifications

Manufacturer Infineon

Product Category IGBTs - Single

Series -

Packaging Tube

Unit-Weight 0.211644 oz

Mounting-Style Through Hole

Package-Case TO-220-3

Input-Type Standard

Mounting-Type Through Hole

Supplier-Device-Package TO-220AB

Configuration Single

Power-Max 100W

Reverse-Recovery-Time-trr 42ns

Electric current collectors 31A

Voltage-Collector-Emitter-Breakdown-Max 600V

IGBT-Type -

Current-Collector-Pulsed-Icm 124A

Vce-on-Max-Vge-Ic 1.8V @ 15V, 17A

Switching-Energy 630Î¼J (on), 1.39mJ (off)

Total Gate Charge 51nC

Td-on-off-25Â°C 42ns/230ns

Test-Condition 480V, 17A, 23 Ohm, 15V

Pd-Power-Dissipation 100 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Collector-Emitter-Voltage-VCEO-Max 600 V

Collector-Emitter-Saturation-Voltage 1.59 V

Continuous-Collector-Current-at-25-C 31 A

Gate-Emitter-Leakage-Current 100 nA

Maximum-Gate-Emitter-Voltage +/- 20 V

Continuous-Collector-Current-Ic-Max 31 A

Product Details

Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

â€¢ Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
â€¢ Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
â€¢ IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
â€¢ Industry standard TO-220AB package
â€¢ Lead-Free

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Mfr. Part #: IRG4BC30FDPBF