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IRG4PH50UDPBF

IGBT 45A Through Hole 200W 90ns TO-247AC 1200V

Product Category: IGBTs - Single
Mfr. Part #
IRG4PH50UDPBF
Manufacturer: Infineon
Package: TO-247-3
Lead Free Status /RoHS Status:
Data Sheet: IRG4PH50UDPBF Datasheet
Inventory: In Stock

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Mfr. Part #: IRG4PH50UDPBF

Specifications
Product Details

Specifications

Manufacturer Infineon

Product Category IGBTs - Single

Series -

Packaging Bulk

Unit-Weight 1.340411 oz

Mounting-Style Through Hole

Package-Case TO-247-3

Input-Type Standard

Mounting-Type Through Hole

Supplier-Device-Package TO-247AC

Configuration Single

Power-Max 200W

Reverse-Recovery-Time-trr 90ns

Electric current collectors 45A

Voltage-Collector-Emitter-Breakdown-Max 1200V

IGBT-Type -

Current-Collector-Pulsed-Icm 180A

Vce-on-Max-Vge-Ic 3.7V @ 15V, 24A

Switching-Energy 2.1mJ (on), 1.5mJ (off)

Total Gate Charge 160nC

Td-on-off-25Â°C 47ns/110ns

Test-Condition 800V, 24A, 5 Ohm, 15V

Pd-Power-Dissipation 200 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Collector-Emitter-Voltage-VCEO-Max 1.2 kV

Collector-Emitter-Saturation-Voltage 3.7 V

Continuous-Collector-Current-at-25-C 45 A

Maximum-Gate-Emitter-Voltage +/- 20 V

Continuous-Collector-Current-Ic-Max 45 A

Product Details

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

â€¢ UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
â€¢ New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
â€¢ IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
â€¢ Industry standard TO-247AC package
â€¢ Lead-Free

Benefits

â€¢ Higher switching frequency capability than competitive IGBTs
â€¢ Highest efficiency available
â€¢ HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require
less/no snubbing

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Mfr. Part #: IRG4PH50UDPBF