wholesale IXBF55N300 IGBT Transistors supplier,manufacturer,distributor

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IXBF55N300

IGBT Transistors High Voltage High Gain BIMOSFET

  • IGBT Transistors
  • IXBF55N300
  • IXYS
  • Tube
  • IXBF55N300 Datasheet
  • In Stock
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Mfr. Part #: IXBF55N300

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Package / Case ISOPLUS i4-PAK-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 3 kV
Collector-Emitter Saturation Voltage 2.7 V
Maximum Gate Emitter Voltage - 25 V, + 25 V
Continuous Collector Current at 25 C 86 A
Pd - Power Dissipation 357 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series Very High Voltage
Packaging Tube
Brand IXYS
Gate-Emitter Leakage Current +/- 200 nA
Product Type IGBT Transistors
Standard Pack Qty 25
Subcategory IGBTs
Tradename BIMOSFET

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXBF55N300. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXBF55N300

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