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IXBH5N160G

IGBT 5.7A Through Hole 68W BIMOSFETâ„¢ TO-247AD (IXBH) 1600V

Product Category: IGBTs - Single
Mfr. Part #
IXBH5N160G
Manufacturer: IXYS
Package: TO-247-3
Lead Free Status /RoHS Status:
Data Sheet: IXBH5N160G Datasheet
Inventory: In Stock

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Mfr. Part #: IXBH5N160G

Specifications
Product Details

Specifications

Manufacturer IXYS

Product Category IGBTs - Single

Series BIMOSFETâ„¢

Packaging Tube

Unit-Weight 0.229281 oz

Mounting-Style Through Hole

Tradename BIMOSFET

Package-Case TO-247-3

Input-Type Standard

Mounting-Type Through Hole

Supplier-Device-Package TO-247AD (IXBH)

Configuration Single

Power-Max 68W

Reverse-Recovery-Time-trr -

Electric current collectors 5.7A

Voltage-Collector-Emitter-Breakdown-Max 1600V

IGBT-Type -

Current-Collector-Pulsed-Icm -

Vce-on-Max-Vge-Ic 7.2V @ 15V, 3A

Switching-Energy -

Total Gate Charge 26nC

Td-on-off-25Â°C -

Test-Condition 960V, 3A, 47 Ohm, 10V

Pd-Power-Dissipation 68 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Collector-Emitter-Voltage-VCEO-Max 1.6 kV

Collector-Emitter-Saturation-Voltage 4.9 V

Continuous-Collector-Current-at-25-C 5.7 A

Gate-Emitter-Leakage-Current 100 nA

Maximum-Gate-Emitter-Voltage +/- 20 V

Continuous-Collector-Current-Ic-Max 6 A

Product Details

High Voltage BIMOSFETâ„¢

Monolithic Bipolar MOS Transistor

Features

â€¢ High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- MOSFET compatible control
10 V turn on gate voltage
- fast switching for high frequency
operation
- reverse conduction capability
â€¢ industry standard package
- TO-220AB
- TO-247AD
epoxy meets UL94V-0

Applications

â€¢ switched mode power supplies
â€¢ DC-DC converters
â€¢ resonant converters
â€¢ lamp ballasts
â€¢ laser generators, x ray generators

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Mfr. Part #: IXBH5N160G