wholesale IXBN75N170A IGBT Transistors supplier,manufacturer,distributor

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IXBN75N170A

IGBT Transistors 75 Amps 1700V 6.00 Rds

  • IGBT Transistors
  • IXBN75N170A
  • IXYS
  • Tube
  • IXBN75N170A Datasheet
  • In Stock
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Mfr. Part #: IXBN75N170A

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  • Specifications
  • Product Details

Specifications

Manufacturer IXYS
RoHS
Technology Si
Package / Case SOT-227B-4
Mounting Style SMD/SMT
Configuration Single
Collector- Emitter Voltage VCEO Max 1.7 kV
Collector-Emitter Saturation Voltage 4.95 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 75 A
Pd - Power Dissipation 625 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series IXBN75N170
Packaging Tube
Continuous Collector Current Ic Max 350 A
Height 9.6 mm
Length 38.23 mm
Operating Temperature Range - 55 C to + 150 C
Width 25.42 mm
Brand IXYS
Continuous Collector Current 75 A
Gate-Emitter Leakage Current 100 nA
Product Type IGBT Transistors
Standard Pack Qty 10
Subcategory IGBTs
Tradename BIMOSFET

Product Details

Features

• International Standard Package
• miniBLOC, with Aluminium Nitride Isolation
• Square RBSOA
• 2500V~ Isolation Voltage
• High Blocking Voltage
• International Standard Package
• Anti-Parallel Diode
• Low Conduction Losses

Advantages

• Low Gate Drive Requirement
• High Power Density

Applications

• Switch-Mode and Resonant-Mode Power Supplies
• Uninterruptible Power Supplies (UPS)
• AC Motor Drives
• Capacitor Discharge Circuits
• AC Switches

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXBN75N170A. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXBN75N170A

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