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IXBT42N170-TRL

MOSFET IXBT42N170 TRL

  • MOSFET
  • IXBT42N170-TRL
  • IXYS
  • Reel
  • IXBT42N170-TRL Datasheet
  • In Stock
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Mfr. Part #: IXBT42N170-TRL

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case TO-268-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.7 kV
Id - Continuous Drain Current 80 A
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 188 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 360 W
Channel Mode Enhancement
Series BIMOSFET
Packaging Reel
Configuration Single
Transistor Type 1 N-Channel
Brand IXYS
Forward Transconductance - Min 24 S
Fall Time 740 ns
Product Type MOSFET
Rise Time 188 ns
Standard Pack Qty 400
Subcategory MOSFETs
Typical Turn-Off Delay Time 330 ns
Typical Turn-On Delay Time 36 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXBT42N170-TRL. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXBT42N170-TRL

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