wholesale IXDR30N120D1 IGBT Transistors supplier,manufacturer,distributor

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IXDR30N120D1

IGBT Transistors 30 Amps 1200V

  • IGBT Transistors
  • IXDR30N120D1
  • IXYS
  • Tube
  • IXDR30N120D1 Datasheet
  • In Stock
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Mfr. Part #: IXDR30N120D1

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Package / Case ISOPLUS247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 2.4 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 50 A
Pd - Power Dissipation 200 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series IXDR30N120
Packaging Tube
Continuous Collector Current Ic Max 60 A
Height 21.34 mm
Length 16.13 mm
Operating Temperature Range - 55 C to + 150 C
Width 5.21 mm
Brand IXYS
Continuous Collector Current 50 A
Gate-Emitter Leakage Current 500 nA
Product Type IGBT Transistors
Standard Pack Qty 30
Subcategory IGBTs
Tradename ISOPLUS

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXDR30N120D1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXDR30N120D1

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