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IXFA3N120-TRL

MOSFET IXFA3N120 TRL

  • MOSFET
  • IXFA3N120-TRL
  • IXYS
  • Reel
  • In Stock
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Mfr. Part #: IXFA3N120-TRL

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case TO-263-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV
Id - Continuous Drain Current 3 A
Rds On - Drain-Source Resistance 4.5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 39 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 200 W
Channel Mode Enhancement
Series HiPerFET
Packaging Reel
Configuration Single
Transistor Type 1 N-Channel
Brand IXYS
Forward Transconductance - Min 1.5 S
Fall Time 18 ns
Product Type MOSFET
Rise Time 15 ns
Standard Pack Qty 800
Subcategory MOSFETs
Typical Turn-Off Delay Time 32 ns
Typical Turn-On Delay Time 17 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFA3N120-TRL. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFA3N120-TRL

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