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IXFE180N20

Discrete Semiconductor Modules 180 Amps 200V 0.01 Rds

Product Category: Discrete Semiconductor Modules
Mfr. Part #
IXFE180N20
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: IXFE180N20

Specifications

Specifications

Manufacturer IXYS

Product Power MOSFET Modules

Technology Si

Vgs - Gate-Source Voltage - 20 V, + 20 V

Mounting Style Chassis Mount

Package / Case ISOPLUS-227-4

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Series IXFE180N20

Packaging Tube

Configuration Single

Height 9.65 mm

Length 38.23 mm

Width 25.42 mm

Brand IXYS

Number of Channels 1 Channel

Transistor Polarity N-Channel

Fall Time 36 ns

Id - Continuous Drain Current 158 A

Pd - Power Dissipation 500 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 12 mOhms

Rise Time 85 ns

Standard Pack Qty 10

Subcategory Discrete Semiconductor Modules

Tradename HyperFET

Typical Turn-Off Delay Time 180 ns

Typical Turn-On Delay Time 55 ns

Vds - Drain-Source Breakdown Voltage 200 V

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFE180N20