wholesale IXFH12N90 MOSFET supplier,manufacturer,distributor

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IXFH12N90

MOSFET 900V 12A

  • MOSFET
  • IXFH12N90
  • IXYS
  • Tube
  • IXFH12N90 Datasheet
  • In Stock
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Mfr. Part #: IXFH12N90

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-247-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 900 V
Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 1.1 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 300 W
Channel Mode Enhancement
Tradename HyperFET
Series HiPerFET
Packaging Tube
Configuration Single
Height 21.46 mm
Length 16.26 mm
Transistor Type 1 N-Channel
Width 5.3 mm
Brand IXYS
Forward Transconductance - Min 12 S
Fall Time 18 ns
Product Type MOSFET
Rise Time 12 ns
Standard Pack Qty 30
Subcategory MOSFETs
Typical Turn-Off Delay Time 51 ns
Typical Turn-On Delay Time 18 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFH12N90. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXFH12N90

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