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IXFH20N60

MOSFET 600V 20A

Product Category: MOSFET
Mfr. Part #
IXFH20N60
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXFH20N60 Datasheet
Inventory: In Stock

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Mfr. Part #: IXFH20N60

Specifications

Specifications

Manufacturer IXYS

Technology Si

Mounting Style Through Hole

Package / Case TO-247-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 600 V

Id - Continuous Drain Current 20 A

Rds On - Drain-Source Resistance 350 mOhms

Vgs - Gate-Source Voltage - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage 4.5 V

Qg - Gate Charge 170 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 300 W

Channel Mode Enhancement

Tradename HyperFET

Series HiPerFET

Packaging Tube

Configuration Single

Height 21.46 mm

Length 16.26 mm

Transistor Type 1 N-Channel

Width 5.3 mm

Brand IXYS

Forward Transconductance - Min 18 S

Fall Time 40 ns

Product Type MOSFET

Rise Time 43 ns

Standard Pack Qty 30

Subcategory MOSFETs

Typical Turn-Off Delay Time 70 ns

Typical Turn-On Delay Time 20 ns

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Mfr. Part #: IXFH20N60