wholesale IXFH26N50 MOSFET supplier,manufacturer,distributor

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IXFH26N50

MOSFET DIODE Id26 BVdass500

  • MOSFET
  • IXFH26N50
  • IXYS
  • Tube
  • IXFH26N50 Datasheet
  • In Stock
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Mfr. Part #: IXFH26N50

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-247-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 26 A
Rds On - Drain-Source Resistance 200 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 300 W
Channel Mode Enhancement
Tradename HyperFET
Series IXFH26N50
Packaging Tube
Configuration Single
Height 21.46 mm
Length 16.26 mm
Transistor Type 1 N-Channel
Width 5.3 mm
Brand IXYS
Forward Transconductance - Min 21 S
Fall Time 30 ns
Product Type MOSFET
Rise Time 33 ns
Standard Pack Qty 30
Subcategory MOSFETs
Typical Turn-Off Delay Time 65 ns
Typical Turn-On Delay Time 16 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFH26N50. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFH26N50

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CSV or Excel file format only. Max file size: 2Mb

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