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IXFH60N20

MOSFET 60 Amps 200V 0.033 Rds

Product Category: MOSFET
Mfr. Part #
IXFH60N20
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXFH60N20 Datasheet
Inventory: In Stock

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Mfr. Part #: IXFH60N20

Specifications

Specifications

Manufacturer IXYS

Technology Si

Mounting Style Through Hole

Package / Case TO-247-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 200 V

Id - Continuous Drain Current 60 A

Rds On - Drain-Source Resistance 33 mOhms

Vgs - Gate-Source Voltage - 20 V, + 20 V

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 300 W

Channel Mode Enhancement

Tradename HyperFET

Series IXFH60N20

Packaging Tube

Configuration Single

Height 21.46 mm

Length 16.26 mm

Transistor Type 1 N-Channel

Width 5.3 mm

Brand IXYS

Fall Time 26 ns

Product Type MOSFET

Rise Time 63 ns

Standard Pack Qty 30

Subcategory MOSFETs

Typical Turn-Off Delay Time 85 ns

Typical Turn-On Delay Time 38 ns

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFH60N20