wholesale IXFH80N10 MOSFET supplier,manufacturer,distributor

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IXFH80N10

MOSFET 80 Amps 100V 0.125 Rds

  • MOSFET
  • IXFH80N10
  • IXYS
  • Tube
  • IXFH80N10 Datasheet
  • In Stock
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Mfr. Part #: IXFH80N10

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-247-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 80 A
Rds On - Drain-Source Resistance 12.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 300 W
Channel Mode Enhancement
Tradename HyperFET
Series IXFH80N10
Packaging Tube
Configuration Single
Height 21.46 mm
Length 16.26 mm
Transistor Type 1 N-Channel
Width 5.3 mm
Brand IXYS
Fall Time 26 ns
Product Type MOSFET
Rise Time 63 ns
Standard Pack Qty 30
Subcategory MOSFETs
Typical Turn-Off Delay Time 90 ns
Typical Turn-On Delay Time 41 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFH80N10. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFH80N10

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