wholesale IXFL32N120P MOSFET supplier,manufacturer,distributor

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IXFL32N120P

MOSFET 32 Amps 1200V

  • MOSFET
  • IXFL32N120P
  • IXYS
  • Tube
  • IXFL32N120P Datasheet
  • In Stock
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Mfr. Part #: IXFL32N120P

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-264-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV
Id - Continuous Drain Current 24 A
Rds On - Drain-Source Resistance 340 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 520 W
Channel Mode Enhancement
Tradename HiPerFET
Series IXFL32N120
Packaging Tube
Configuration Single
Height 26.42 mm
Length 20.29 mm
Transistor Type 1 N-Channel
Width 5.21 mm
Brand IXYS
Fall Time 51 ns
Product Type MOSFET
Rise Time 62 ns
Standard Pack Qty 25
Subcategory MOSFETs
Typical Turn-Off Delay Time 88 ns
Typical Turn-On Delay Time 70 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFL32N120P. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFL32N120P

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