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IXFN120N65X2

Discrete Semiconductor Modules 650V/108A Ultra Junction X2-Class

Product Category: Discrete Semiconductor Modules
Mfr. Part #
IXFN120N65X2
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXFN120N65X2 Datasheet
Inventory: In Stock

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Mfr. Part #: IXFN120N65X2

Specifications

Specifications

Manufacturer IXYS

Product Power MOSFET Modules

Type HiperFET

Technology Si

Vgs - Gate-Source Voltage - 30 V, + 30 V

Mounting Style Screw Mounts

Package / Case SOT-227-4

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Series 650V Ultra Junction X2

Packaging Tube

Configuration Single

Brand IXYS

Number of Channels 1 Channel

Transistor Polarity N-Channel

Fall Time 12 ns

Id - Continuous Drain Current 108 A

Pd - Power Dissipation 890 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 24 mOhms

Rise Time 23 ns

Standard Pack Qty 10

Subcategory Discrete Semiconductor Modules

Tradename HiPerFET

Typical Turn-Off Delay Time 86 ns

Typical Turn-On Delay Time 64 ns

Vds - Drain-Source Breakdown Voltage 650 V

Vgs th - Gate-Source Threshold Voltage 2.7 V

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Mfr. Part #: IXFN120N65X2