wholesale IXFN170N10 Discrete Semiconductor Modules supplier,manufacturer,distributor

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IXFN170N10

Discrete Semiconductor Modules 170 Amps 100V

  • Discrete Semiconductor Modules
  • IXFN170N10
  • IXYS
  • Tube
  • IXFN170N10 Datasheet
  • In Stock
  • Unit Price:
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  • Quantity:
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Mfr. Part #: IXFN170N10

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Vgs - Gate-Source Voltage - 20 V, + 20 V
Mounting Style Chassis Mount
Package / Case SOT-227-4
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series HiPerFET
Packaging Tube
Configuration Single
Height 9.6 mm
Length 38.3 mm
Width 25.07 mm
Brand IXYS
Number of Channels 1 Channel
Transistor Polarity N-Channel
Fall Time 79 ns
Id - Continuous Drain Current 170 A
Pd - Power Dissipation 600 W
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 10 mOhms
Rise Time 90 ns
Standard Pack Qty 10
Subcategory Discrete Semiconductor Modules
Tradename HyperFET
Typical Turn-Off Delay Time 158 ns
Typical Turn-On Delay Time 40 ns
Vds - Drain-Source Breakdown Voltage 100 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFN170N10. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFN170N10

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