wholesale IXFN180N20 Discrete Semiconductor Modules supplier,manufacturer,distributor

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IXFN180N20

Discrete Semiconductor Modules 200V 180A

  • Discrete Semiconductor Modules
  • IXFN180N20
  • IXYS
  • Tube
  • IXFN180N20 Datasheet
  • In Stock
  • Unit Price:
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  • Quantity:
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Mfr. Part #: IXFN180N20

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Vgs - Gate-Source Voltage - 20 V, + 20 V
Mounting Style Chassis Mount
Package / Case SOT-227-4
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series HiPerFET
Packaging Tube
Configuration Single
Height 9.6 mm
Length 38.23 mm
Width 25.42 mm
Brand IXYS
Number of Channels 1 Channel
Transistor Polarity N-Channel
Fall Time 56 ns
Id - Continuous Drain Current 180 A
Pd - Power Dissipation 700 W
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 6 mOhms
Rise Time 85 ns
Standard Pack Qty 10
Subcategory Discrete Semiconductor Modules
Tradename HyperFET
Typical Turn-Off Delay Time 180 ns
Typical Turn-On Delay Time 55 ns
Vds - Drain-Source Breakdown Voltage 200 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFN180N20. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFN180N20

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