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IXFN180N25T

Discrete Semiconductor Modules 155A 250V

Product Category: Discrete Semiconductor Modules
Mfr. Part #
IXFN180N25T
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXFN180N25T Datasheet
Inventory: In Stock

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Mfr. Part #: IXFN180N25T

Specifications

Specifications

Manufacturer IXYS

Product Power MOSFET Modules

Type GigaMOS Power MOSFET

Technology Si

Vgs - Gate-Source Voltage - 20 V, + 20 V

Mounting Style Screw Mounts

Package / Case SOT-227-4

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Series IXFN180N25

Packaging Tube

Configuration Single

Height 12.22 mm

Length 38.23 mm

Width 25.42 mm

Brand IXYS

Number of Channels 1 Channel

Transistor Polarity N-Channel

Fall Time 20 ns

Id - Continuous Drain Current 168 A

Pd - Power Dissipation 900 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 12.9 mOhms

Rise Time 52 ns

Standard Pack Qty 10

Subcategory Discrete Semiconductor Modules

Tradename HiPerFET

Typical Turn-Off Delay Time 88 ns

Typical Turn-On Delay Time 35 ns

Vds - Drain-Source Breakdown Voltage 250 V

Vgs th - Gate-Source Threshold Voltage 3 V

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Mfr. Part #: IXFN180N25T