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IXFN20N120

Discrete Semiconductor Modules 20 Amps 1200 V 0.75 Ohms Rds

Product Category: Discrete Semiconductor Modules
Mfr. Part #
IXFN20N120
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: IXFN20N120

Specifications

Specifications

Manufacturer IXYS

Product Power MOSFET Modules

Technology Si

Vgs - Gate-Source Voltage - 30 V, + 30 V

Mounting Style Chassis Mount

Package / Case SOT-227-4

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Series IXFN20N120

Packaging Tube

Configuration Single

Height 9.6 mm

Length 38.2 mm

Width 25.07 mm

Brand IXYS

Number of Channels 1 Channel

Transistor Polarity N-Channel

Fall Time 20 ns

Id - Continuous Drain Current 20 A

Pd - Power Dissipation 780 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 750 mOhms

Rise Time 45 ns

Standard Pack Qty 10

Subcategory Discrete Semiconductor Modules

Tradename HyperFET

Typical Turn-Off Delay Time 75 ns

Typical Turn-On Delay Time 25 ns

Vds - Drain-Source Breakdown Voltage 1.2 kV

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFN20N120