wholesale IXFN26N120P Discrete Semiconductor Modules supplier,manufacturer,distributor

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IXFN26N120P

Discrete Semiconductor Modules 26 Amps 1200V

  • Discrete Semiconductor Modules
  • IXFN26N120P
  • IXYS
  • Tube
  • IXFN26N120P Datasheet
  • In Stock
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Mfr. Part #: IXFN26N120P

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Vgs - Gate-Source Voltage - 30 V, + 30 V
Mounting Style Chassis Mount
Package / Case SOT-227-4
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series IXFN26N120
Packaging Tube
Configuration Single
Height 9.6 mm
Length 38.23 mm
Width 25.42 mm
Brand IXYS
Number of Channels 1 Channel
Transistor Polarity N-Channel
Fall Time 58 ns
Id - Continuous Drain Current 23 A
Pd - Power Dissipation 695 W
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 460 mOhms
Rise Time 55 ns
Standard Pack Qty 10
Subcategory Discrete Semiconductor Modules
Tradename HiPerFET
Typical Turn-Off Delay Time 76 ns
Typical Turn-On Delay Time 56 ns
Vds - Drain-Source Breakdown Voltage 1.2 kV

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFN26N120P. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFN26N120P

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