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IXFN32N100P

Discrete Semiconductor Modules 32 Amps 1000V 0.32 Rds

Product Category: Discrete Semiconductor Modules
Mfr. Part #
IXFN32N100P
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXFN32N100P Datasheet
Inventory: In Stock

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Mfr. Part #: IXFN32N100P

Specifications

Specifications

Manufacturer IXYS

Product Power MOSFET Modules

Type Polar Power MOSFET HiPerFET

Technology Si

Vgs - Gate-Source Voltage - 30 V, + 30 V

Mounting Style Screw Mounts

Package / Case SOT-227-4

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Series IXFN32N100

Packaging Tube

Configuration Single

Height 12.22 mm

Length 38.23 mm

Width 25.42 mm

Brand IXYS

Number of Channels 1 Channel

Transistor Polarity N-Channel

Fall Time 43 ns

Id - Continuous Drain Current 27 A

Pd - Power Dissipation 690 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 320 mOhms

Rise Time 55 ns

Standard Pack Qty 10

Subcategory Discrete Semiconductor Modules

Tradename HiPerFET

Typical Turn-Off Delay Time 76 ns

Typical Turn-On Delay Time 50 ns

Vds - Drain-Source Breakdown Voltage 1 kV

Vgs th - Gate-Source Threshold Voltage 6.5 V

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Mfr. Part #: IXFN32N100P