wholesale IXFN32N100Q3 Discrete Semiconductor Modules supplier,manufacturer,distributor

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IXFN32N100Q3

Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 1000V/28A

  • Discrete Semiconductor Modules
  • IXFN32N100Q3
  • IXYS
  • Tube
  • IXFN32N100Q3 Datasheet
  • In Stock
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Mfr. Part #: IXFN32N100Q3

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Product Power MOSFET Modules
Type HiperFET
Technology Si
Vgs - Gate-Source Voltage - 30 V, + 30 V
Mounting Style Screw Mounts
Package / Case SOT-227-4
Maximum Operating Temperature + 150 C
Series IXFN32N1003
Packaging Tube
Configuration Single
Brand IXYS
Number of Channels 1 Channel
Transistor Polarity N-Channel
Id - Continuous Drain Current 28 A
Pd - Power Dissipation 780 W
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 320 mOhms
Rise Time 300 ns
Standard Pack Qty 10
Subcategory Discrete Semiconductor Modules
Tradename HiPerFET
Vds - Drain-Source Breakdown Voltage 1 kV

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFN32N100Q3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXFN32N100Q3

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