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IXFN360N10T

Discrete Semiconductor Modules 360 Amps 100V

Product Category: Discrete Semiconductor Modules
Mfr. Part #
IXFN360N10T
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXFN360N10T Datasheet
Inventory: In Stock

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Mfr. Part #: IXFN360N10T

Specifications

Specifications

Manufacturer IXYS

Product Power MOSFET Modules

Type Power MOSFET

Technology Si

Vgs - Gate-Source Voltage - 20 V, + 20 V

Mounting Style Screw Mounts

Package / Case SOT-227-4

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Series IXFN360N10

Packaging Tube

Configuration Single

Brand IXYS

Number of Channels 1 Channel

Transistor Polarity N-Channel

Fall Time 160 ns

Id - Continuous Drain Current 360 A

Pd - Power Dissipation 830 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 2.6 mOhms

Rise Time 100 ns

Standard Pack Qty 10

Subcategory Discrete Semiconductor Modules

Tradename HiPerFET

Typical Turn-Off Delay Time 80 ns

Typical Turn-On Delay Time 47 ns

Vds - Drain-Source Breakdown Voltage 100 V

Vgs th - Gate-Source Threshold Voltage 2.5 V

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Mfr. Part #: IXFN360N10T