wholesale IXFN420N10T Discrete Semiconductor Modules supplier,manufacturer,distributor

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IXFN420N10T

Discrete Semiconductor Modules TRENCH HIPERFET PWR MOSFET 100V 420A

  • Discrete Semiconductor Modules
  • IXFN420N10T
  • IXYS
  • Tube
  • IXFN420N10T Datasheet
  • In Stock
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Mfr. Part #: IXFN420N10T

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Product Power MOSFET Modules
Type GigaMos Trench HiperFet Power MOSFET
Technology Si
Vgs - Gate-Source Voltage - 20 V, + 20 V
Mounting Style Screw Mounts
Package / Case SOT-227-4
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series IXFN420N10
Packaging Tube
Configuration Single
Brand IXYS
Number of Channels 1 Channel
Transistor Polarity N-Channel
Fall Time 255 ns
Id - Continuous Drain Current 420 A
Pd - Power Dissipation 1.07 mW
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 2.3 mOhms
Rise Time 155 ns
Standard Pack Qty 10
Subcategory Discrete Semiconductor Modules
Tradename HiPerFET
Typical Turn-Off Delay Time 115 ns
Typical Turn-On Delay Time 47 ns
Vds - Drain-Source Breakdown Voltage 100 V
Vgs th - Gate-Source Threshold Voltage 2.5 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFN420N10T. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXFN420N10T

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