wholesale IXFN50N120SK Discrete Semiconductor Modules supplier,manufacturer,distributor

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IXFN50N120SK

Discrete Semiconductor Modules SiC Power MOSFET

  • Discrete Semiconductor Modules
  • IXFN50N120SK
  • IXYS
  • Tube
  • IXFN50N120SK Datasheet
  • In Stock
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  • Quantity:
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Mfr. Part #: IXFN50N120SK

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Product Power MOSFET Modules
Technology SiC
Vgs - Gate-Source Voltage - 20 V, + 20 V
Mounting Style Chassis Mount
Package / Case SOT-227-4
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tube
Configuration Single
Brand IXYS
Number of Channels 1 Channel
Transistor Polarity N-Channel
Id - Continuous Drain Current 48 A
Pd - Power Dissipation -
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 40 mOhms
Standard Pack Qty 10
Subcategory Discrete Semiconductor Modules
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 2.4 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFN50N120SK. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFN50N120SK

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