wholesale IXFN52N90P Discrete Semiconductor Modules supplier,manufacturer,distributor

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IXFN52N90P

Discrete Semiconductor Modules PolarHV HiPerFETs 500V-1.2Kv Red Rds

  • Discrete Semiconductor Modules
  • IXFN52N90P
  • IXYS
  • Tube
  • IXFN52N90P Datasheet
  • In Stock
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Mfr. Part #: IXFN52N90P

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Type Polar Power MOSFET
Technology Si
Vgs - Gate-Source Voltage - 30 V, + 30 V
Mounting Style Chassis Mount
Package / Case SOT-227-4
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series IXFN52N90
Packaging Tube
Brand IXYS
Transistor Polarity N-Channel
Fall Time 42 ns
Id - Continuous Drain Current 43 A
Pd - Power Dissipation 890 W
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 160 mOhms
Rise Time 80 ns
Standard Pack Qty 10
Subcategory Discrete Semiconductor Modules
Tradename HiPerFET
Typical Turn-Off Delay Time 95 ns
Typical Turn-On Delay Time 63 ns
Vds - Drain-Source Breakdown Voltage 900 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFN52N90P. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXFN52N90P

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