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IXFN90N30

Discrete Semiconductor Modules 90 Amps 300V 0.033 Rds

Product Category: Discrete Semiconductor Modules
Mfr. Part #
IXFN90N30
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXFN90N30 Datasheet
Inventory: In Stock

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Mfr. Part #: IXFN90N30

Specifications

Specifications

Manufacturer IXYS

Product Power MOSFET Modules

Type HiPerFET Power MOSFET

Technology Si

Vgs - Gate-Source Voltage - 20 V, + 20 V

Mounting Style Chassis Mount

Package / Case SOT-227-4

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Series IXFN90N30

Packaging Tube

Configuration Single

Height 12.22 mm

Length 38.23 mm

Width 25.42 mm

Brand IXYS

Number of Channels 1 Channel

Transistor Polarity N-Channel

Fall Time 40 ns

Id - Continuous Drain Current 90 A

Pd - Power Dissipation 560 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 33 mOhms

Rise Time 55 ns

Standard Pack Qty 10

Subcategory Discrete Semiconductor Modules

Tradename HyperFET

Typical Turn-Off Delay Time 100 ns

Typical Turn-On Delay Time 42 ns

Vds - Drain-Source Breakdown Voltage 300 V

Vgs th - Gate-Source Threshold Voltage 4 V

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Mfr. Part #: IXFN90N30