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IXFR26N100P

MOSFET 26 Amps 1000V 0.39 Rds

Product Category: MOSFET
Mfr. Part #
IXFR26N100P
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXFR26N100P Datasheet
Inventory: In Stock

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Mfr. Part #: IXFR26N100P

Specifications

Specifications

Manufacturer IXYS

Technology Si

Mounting Style Through Hole

Package / Case TO-247-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 1 kV

Id - Continuous Drain Current 15 A

Rds On - Drain-Source Resistance 430 mOhms

Vgs - Gate-Source Voltage - 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage 6.5 V

Qg - Gate Charge 197 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 290 W

Channel Mode Enhancement

Tradename HiPerFET

Series IXFR26N100

Packaging Tube

Configuration Single

Height 21.34 mm

Length 16.13 mm

Transistor Type 1 N-Channel

Type Polar Power MOSFET HiPerFET

Width 5.21 mm

Brand IXYS

Forward Transconductance - Min 13 S

Fall Time 50 ns

Product Type MOSFET

Rise Time 45 ns

Standard Pack Qty 30

Subcategory MOSFETs

Typical Turn-Off Delay Time 72 ns

Typical Turn-On Delay Time 45 ns

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Mfr. Part #: IXFR26N100P