wholesale IXFT58N20 MOSFET supplier,manufacturer,distributor

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IXFT58N20

MOSFET 58 Amps 200V 0.08W Rds

  • MOSFET
  • IXFT58N20
  • IXYS
  • Tube
  • IXFT58N20 Datasheet
  • In Stock
  • Unit Price:
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Mfr. Part #: IXFT58N20

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  • Specifications

Specifications

Manufacturer IXYS
Technology Si
Mounting Style SMD/SMT
Package / Case TO-268-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 58 A
Rds On - Drain-Source Resistance 40 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 300 W
Channel Mode Enhancement
Tradename HyperFET
Series HiPerFET
Packaging Tube
Configuration Single
Transistor Type 1 N-Channel
Brand IXYS
Fall Time 16 ns
Product Type MOSFET
Rise Time 15 ns
Standard Pack Qty 30
Subcategory MOSFETs
Typical Turn-Off Delay Time 72 ns
Typical Turn-On Delay Time 18 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFT58N20. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFT58N20

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