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IXFT80N65X2HVTRL

MOSFET IXFT80N65X2HV TRL

  • MOSFET
  • IXFT80N65X2HV-TRL
  • IXYS
  • Reel
  • IXFT80N65X2HV-TRL Datasheet
  • In Stock
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Mfr. Part #: IXFT80N65X2HV-TRL

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-268HV-3
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 80 A
Rds On - Drain-Source Resistance 38 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Qg - Gate Charge 140 nC
Pd - Power Dissipation 890 W
Channel Mode Enhancement
Tradename HiPerFET
Packaging Reel
Configuration Single
Brand IXYS
Forward Transconductance - Min 33 S
Fall Time 11 ns
Moisture Sensitive Yes
Product Type MOSFET
Rise Time 24 ns
Standard Pack Qty 400
Subcategory MOSFETs
Typical Turn-Off Delay Time 70 ns
Typical Turn-On Delay Time 32 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFT80N65X2HVTRL. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFT80N65X2HV-TRL

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