wholesale IXGK55N120A3H1 IGBT Modules supplier,manufacturer,distributor

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IXGK55N120A3H1

IGBT Modules Low-Frequency Range Low Vcesat w/ Diode

  • IGBT Modules
  • IXGK55N120A3H1
  • IXYS
  • Tube
  • IXGK55N120A3H1 Datasheet
  • In Stock
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Mfr. Part #: IXGK55N120A3H1

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Product IGBT Silicon Modules
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.85 V
Continuous Collector Current at 25 C 125 A
Gate-Emitter Leakage Current 100 nA
Package / Case TO-264-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Packaging Tube
Series IXGK55N120
Technology Si
Brand IXYS
Mounting Style Through Hole
Maximum Gate Emitter Voltage 20 V
Product Type IGBT Modules
Standard Pack Qty 25
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXGK55N120A3H1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXGK55N120A3H1

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