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IXTA20N65X-TRL

MOSFET IXTA20N65X TRL

  • MOSFET
  • IXTA20N65X-TRL
  • IXYS
  • Reel
  • IXTA20N65X-TRL Datasheet
  • In Stock
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Mfr. Part #: IXTA20N65X-TRL

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case TO-263-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 20 A
Rds On - Drain-Source Resistance 210 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 35 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 320 W
Channel Mode Enhancement
Packaging Reel
Configuration Single
Transistor Type 1 N-Channel
Brand IXYS
Forward Transconductance - Min 9 S
Fall Time 22 ns
Product Type MOSFET
Rise Time 30 ns
Standard Pack Qty 800
Subcategory MOSFETs
Typical Turn-Off Delay Time 46 ns
Typical Turn-On Delay Time 18 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXTA20N65X-TRL. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXTA20N65X-TRL

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